m58wr016qt datasheet(92/110 Pages) NUMONYX

Part #	M58WR016QT

Description	16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

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Manufacturer	NUMONYX [Numonyx B.V]

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Common Flash Interface

M58WR016QT, M58WR016QB, M58WR032QT, M58WR032QB

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(P+35)h = 6Eh

03h

(P+3D)h = 76h

03h

Bank Region 2 (Erase Block Type 1): Page mode

and synchronous mode capabilities (defined in

Table 39)

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

(P+36)h = 6Fh

07h

Bank Region 2 Erase Block Type 2 Information

Bits 0-15: n+1 = number of identical-sized erase

blocks

Bits 16-31: n×256 = number of bytes in erase block

region

(P+37)h = 70h

00h

(P+38)h = 71h

20h

(P+39)h = 72h

00h

(P+3A)h = 73h

64h

Bank Region 2 (Erase Block Type 2)

Minimum block erase cycles × 1000

(P+3B)h = 74h

00h

(P+3C)h = 75h

01h

Bank Region 2 (Erase Block Type 2): BIts per cell,

internal ECC

Bits 0-3: bits per cell in erase region

Bit 4: reserved for “internal ECC used”

BIts 5-7: reserved

(P+3D)h = 76h

03h

Bank Region 2 (Erase Block Type 2): Page mode

and synchronous mode capabilities (defined in

Table 39)

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

(P+3E)h = 77h

Feature Space definitions

(P+3F)h = 78h

Reserved

1.

The variable P is a pointer which is defined at CFI offset 15h.

2.

Applies to the M58WR016QT/B only.

3.

Applies to the M58WR032QT/B only.

4.

Bank Regions. There are two Bank Regions, see Table 29 and Table 30 for the M58WR016QT/B and see

Table 31 and Table 32 for the M58WR032QT/B.

Table 42.

Bank and erase block region 2 information(1) (continued)

TOP DEVICES

BOTTOM DEVICES

Description

Offset

Data

Offset

Data

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M58WR016QT Datasheet(PDF) 92 Page - Numonyx B.V

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