M58WR016QT datasheet(29/110 Pages) NUMONYX

Part #	M58WR016QT

Description	16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

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Manufacturer	NUMONYX [Numonyx B.V]

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M58WR016QT, M58WR016QB, M58WR032QT, M58WR032QB

Command interface - factory pro-

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6.2

Double Word Program command

The Double Word Program command improves the programming throughput by writing a

page of two adjacent words in parallel. The two words must differ only for the address A0. If

the block is protected, the Double Word Program operation will abort, the data in the block

will not be changed and the Status Register will output the error.

Three bus write cycles are necessary to issue the Double Word Program command.

●

The first bus cycle sets up the Double Word Program Command.

●

The second bus cycle latches the Address and the Data of the first word to be written.

●

The third bus cycle latches the Address and the Data of the second word to be written

and starts the Program/Erase Controller.

Read operations in the bank being programmed output the Status Register content after the

programming has started.

During Double Word Program operations the bank being programmed will only accept the

Read Array, Read Status Register, Read Electronic Signature and Read CFI Query

command, all other commands will be ignored. Dual operations are not supported during

Double Word Program operations and the command cannot be suspended. Typical Program

times are given in Table 15: Program/Erase times and endurance cycles.

Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the

program operation is aborted, the memory locations must be reprogrammed.

See Appendix C, Figure 21: Double Word Program flowchart and pseudo code, for the

flowchart for using the Double Word Program command.

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