M58WR016QT datasheet(90/110 Pages) NUMONYX

Part #	M58WR016QT

Description	16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

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Manufacturer	NUMONYX [Numonyx B.V]

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90 / 110 page

Common Flash Interface

M58WR016QT, M58WR016QB, M58WR032QT, M58WR032QB

90/110

(P+28)h = 61h

06h

Bank Region 1 Erase Block Type 2 Information

Bits 0-15: n+1 = number of identical-sized

erase blocks

Bits 16-31: n×256 = number of bytes in erase block

region

(P+29)h = 62h

00h

(P+2A)h = 63h

00h

(P+2B)h = 64h

01h

(P+2C)h = 65h

64h

Bank Region 1 (Erase Block Type 2)

Minimum block erase cycles × 1000

(P+2D)h = 66h

00h

(P+2E)h = 67h

01h

Bank Region 1 (Erase Block Type 2): BIts per cell,

internal ECC

Bits 0-3: bits per cell in erase region

Bit 4: reserved for “internal ECC used”

BIts 5-7: reserved

(P+2F)h = 68h

03h

Bank Region 1 (Erase Block Type 2): Page mode

and synchronous mode capabilities

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

1.

The variable P is a pointer which is defined at CFI offset 15h.

2.

Applies to the M58WR016QT/B only.

3.

Applies to the M58WR032QT/B only.

4.

Bank Regions. There are two Bank Regions, see Table 29 and Table 30 for the M58WR016QT/B and see

Table 31 and Table 32 for the M58WR032QT/B.

Table 41.

Bank and erase block region 1 information(1) (continued)

TOP DEVICES

BOTTOM DEVICES

Description

Offset

Data

Offset

Data

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M58WR016QT Datasheet(PDF) 90 Page - Numonyx B.V

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