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M58WR016QT Datasheet(PDF) 8 Page - Numonyx B.V |
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M58WR016QT Datasheet(HTML) 8 Page - Numonyx B.V |
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8 / 110 page  Summary description M58WR016QT, M58WR016QB, M58WR032QT, M58WR032QB 8/110 1 Summary description The M58WR016QT/B and M58WR032QT/B are 16 Mbit (1 Mbit x16) and 32 Mbit (2 Mbit x16) non-volatile Flash memories, respectively. They will be referred to as M58WRxxxQT/B throughout the document unless otherwise specified. The M58WRxxxQT/B may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. The VPP pin can also be used as a control pin to provide absolute protection against program or erase. The device features an asymmetrical block architecture. ● M58WR016QT/B has an array of 39 blocks, and is divided into 4 Mbit banks. There are 3 banks each containing 8 main blocks of 32 KWords, and one parameter bank containing 8 parameter blocks of 4 KWords and 7 main blocks of 32 KWords. ● M58WR032QT/B has an array of 71 blocks, and is divided into 4 Mbit banks. There are 7 banks each containing 8 main blocks of 32 KWords, and one parameter bank containing 8 parameter blocks of 4 KWords and 7 main blocks of 32 KWords. The Multiple Bank Architecture allows Dual Operations, while programming or erasing in one bank, Read operations are possible in other banks. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architectures are summarized in Table 2 and Table 3, and the memory maps are shown in Figure 3 and Figure 4. The Parameter Blocks are located at the top of the memory address space for the M58WR016QT and M58WR032QT, and at the bottom for the M58WR016QB and M58WR032QB. Each block can be erased separately. Erase can be suspended, in order to perform program in any other block, and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage VDD. There are two Enhanced Factory programming commands available to speed up programming. Program and Erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards. The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 66MHz. The synchronous burst read operation can be suspended and resumed. The device features an Automatic Standby mode. When the bus is inactive during Asynchronous Read operations, the device automatically switches to the Automatic Standby mode. In this condition the power consumption is reduced to the standby value IDD4 and the outputs are still driven. The M58WRxxxQT/B features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually |
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