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M58WR016QT Datasheet(PDF) 54 Page - Numonyx B.V

Part # M58WR016QT
Description  16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58WR016QT Datasheet(HTML) 54 Page - Numonyx B.V

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Program and erase times and endurance cycles
M58WR016QT, M58WR016QB, M58WR032QT,
54/110
12
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 15. Exact erase times may change depending on the memory array
condition. The best case is when all the bits in the block or bank are at ‘0’ (preprogrammed).
The worst case is when all the bits in the block or bank are at ‘1’ (not preprogrammed).
Usually, the system overhead is negligible with respect to the erase time.
In the M58WRxxxQT/B the maximum number of Program/ Erase cycles depends on the VPP
voltage supply used.
Table 15.
Program/Erase times and endurance cycles(1)
Parameter
Condition
Min
Typ
Typical
after 100k
W/E
Cycles
Max
Unit
Erase
Parameter Block (4 KWord)(2)
0.3
1
2.5
s
Main Block
(32 KWord)
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit)
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Program(3)
Word
10
10
100
µs
Parameter Block (4 KWord)
32
ms
Main Block (32 KWord)
256
ms
Suspend
Latency
Program
5
10
µs
Erase
5
20
µs
Program/Erase
Cycles (per
Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles


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