M58WR064HT datasheet(1/111 Pages) NUMONYX

Part #	M58WR064HT

Description	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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November 2007

Rev 3

1/111

1

M58WR064HT

M58WR064HB

64 Mbit (4Mb x16, Multiple Bank, Burst)

1.8V supply Flash memories

Feature summary

■ Supply voltage

–VDD = 1.7V to 2V for Program, Erase and

Read

–VDDQ = 1.7V to 2.24V for I/O Buffers

–VPP = 12V for fast Program (optional)

■ Synchronous / asynchronous read

– Synchronous Burst Read mode: 66MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 60ns, 70ns

■ Synchronous burst read suspend

■ Programming time

– 8µs by Word typical for Fast Factory

Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ Memory blocks

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ Dual operations

– Program Erase in one Bank while Read in

others

– No delay between Read and Write

operations

■ Block locking

– All blocks locked at Power up

– Any combination of blocks can be locked

–WP for Block Lock-Down

■ Security

– 128 bit user programmable OTP cells

– 64 bit unique device number

■ Common Flash Interface (CFI)

■ 100,000 program/erase cycles per block

■ Electronic signature

– Manufacturer Code: 20h

– Device Codes:

M58WR064HT (Top): 8810h

M58WR064HB (Bottom): 8811h

■ Package

– ECOPACK®

FBGA

VFBGA56 (ZB)

7.7 x 9 mm

www.numonyx.com

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M58WR064HT Datasheet(PDF) 1 Page - Numonyx B.V

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