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M58WR064HT Datasheet(PDF) 91 Page - Numonyx B.V

Part # M58WR064HT
Description  64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58WR064HT Datasheet(HTML) 91 Page - Numonyx B.V

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M58WR064HT, M58WR064HB
Common Flash Interface
91/111
(P+28)h = 61h
06h
Bank Region 1 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized
erase blocks
Bits 16-31: n×256 = number of bytes in erase block
region
(P+29)h = 62h
00h
(P+2A)h = 63h
00h
(P+2B)h = 64h
01h
(P+2C)h = 65h
64h
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+2D)h = 66h
00h
(P+2E)h = 67h
01h
Bank Regions 1 (Erase Block Type 2): BIts per cell,
internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+2F)h = 68h
03h
Bank Region 1 (Erase Block Type 2): Page mode
and synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
1.
The variable P is a pointer which is defined at CFI offset 15h.
2.
Bank Regions. There are two Bank Regions, see Appendix A, Table 29 and Table 30.
Table 40.
Bank and erase block region 2 information(1)
M58WR064HT
M58WR064HB
Description
Offset
Data
Offset
Data
(P+28)h = 61h
01h
(P+30)h = 69h
0Fh
Number of identical banks within bank region 2
(P+29)h = 62h
00h
(P+31)h = 6Ah
00h
(P+2A)h = 63h
11h
(P+32)h = 6Bh
11h
Number of program or erase operations allowed in
bank region 2:
Bits 0-3: Number of simultaneous program
operations
Bits 4-7: Number of simultaneous erase operations
(P+2B)h = 64h
00h
(P+33)h = 6Ch
00h
Number of program or erase operations allowed in
other banks while a bank in this region is
programming
Bits 0-3: Number of simultaneous program
operations
Bits 4-7: Number of simultaneous erase operations
Table 39.
Bank and erase block region 1 information(1) (continued)
M58WR064HT
M58WR064HB
Description
Offset
Data
Offset
Data


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