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M58WR064HT Datasheet(PDF) 86 Page - Numonyx B.V

Part # M58WR064HT
Description  64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58WR064HT Datasheet(HTML) 86 Page - Numonyx B.V

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Common Flash Interface
M58WR064HT, M58WR064HB
86/111
Table 33.
CFI Query system interface information
Offset
Data
Description
Value
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
1Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
12.6V
1Fh
0004h
Typical time-out per single byte/word program = 2n µs
16µs
20h
0000h
Typical time-out for multi-Byte programming = 2n µs
NA
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0003h
Maximum time-out for word program = 2n times typical
128µs
24h
0000h
Maximum time-out for multi-Byte programming = 2n times typical
NA
25h
0002h
Maximum time-out per individual block erase = 2n times typical
4s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA


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