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M58WR064HT Datasheet(PDF) 54 Page - Numonyx B.V

Part # M58WR064HT
Description  64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58WR064HT Datasheet(HTML) 54 Page - Numonyx B.V

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Program and erase times and endurance cycles
M58WR064HT, M58WR064HB
54/111
12
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 16 Exact erase times may change depending on the memory array
condition. The best case is when all the bits in the block or bank are at ‘0’ (preprogrammed).
The worst case is when all the bits in the block or bank are at ‘1’ (not preprogrammed).
Usually, the system overhead is negligible with respect to the erase time.
In the M58WR064HT/B the maximum number of Program/ Erase cycles depends on the
VPP voltage supply used.
Table 16.
Program/Erase times and endurance cycles
Parameter
Condition(1)
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
Erase
Parameter Block (4 KWord)(2)
0.3
1
2.5
s
Main Block (32
KWord)
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1
4
s
Bank (4Mbit)
Preprogrammed
4.5
s
Not Preprogrammed
6
s
Program(3)
Word Program
10
10
100
µs
Parameter Block (4 KWord)
32
ms
Main Block (32 KWord)
256
ms
Suspend Latency
Program
5
10
µs
Erase
5
20
µs
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
Erase
Parameter Block (4 KWord)
0.25
2.5
s
Main Block (32 KWord)
0.8
4
s
Bank (4Mbit)
6
s
Program(3)
Word/ Double Word/ Quadruple Word (4)
8
100
µs
Parameter Block (4
KWord)
Quadruple Word(4)
8ms
Word
32
ms
Main Block (32
KWord)
Quadruple Word(4)
64
ms
Word
256
ms
Bank (4Mbit)
Quad-Enhanced
Factory Program(4)
0.7
s
Quadruple Word(4)
0.5
s
Program/Erase
Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
1.
TA = –40 to 85°C; VDD = 1.7V to 2V; VDDQ = 1.7V to 2.24V.
2.
The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3.
Excludes the time needed to execute the command sequence.
4.
Measurements performed at 25°C. TA = 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory
Program.


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