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M29W640FT Datasheet(PDF) 29 Page - Numonyx B.V |
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M29W640FT Datasheet(HTML) 29 Page - Numonyx B.V |
29 / 71 page M29W640FT, M29W640FB Command interface 29/71 Table 8. Program, Erase times and Program, Erase Endurance cycles Parameter Min Typ(1)(2) Max(2) Unit Chip Erase 80 400(3) s Block Erase (64 KBytes) 0.8 6(4) s Erase Suspend Latency time 50(4) µs Program (Byte or Word) 10 200(3) µs Double Byte 10 200(3) µs Double Word /Quadruple Byte Program 10 200(3) µs Quadruple Word / Octuple Byte Program 10 200(3) µs Chip Program (Byte by Byte) 80 400(3) s Chip Program (Word by Word) 40 200(3) s Chip Program (Double Word/Quadruple Byte Program) 20 100(3) s Chip Program (Quadruple Word/Octuple Byte Program) 10 50(3) s Program Suspend Latency time 4 µs Program/Erase Cycles (per Block) 100,000 cycles Data Retention 20 years 1. Typical values measured at room temperature and nominal voltages. 2. Sampled, but not 100% tested. 3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. 4. Maximum value measured at worst case conditions for both temperature and VCC. |
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