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M29W640FT Datasheet(PDF) 58 Page - Numonyx B.V

Part # M29W640FT
Description  64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M29W640FT Datasheet(HTML) 58 Page - Numonyx B.V

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Common Flash Interface (CFI)
M29W640FT, M29W640FB
58/71
Table 24.
CFI Query Identification String(1)
1.
Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Address
Data
Description
Value
x16
x8
10h
20h
0051h
“Q”
11h
22h
0052h Query Unique ASCII String "QRY"
"R"
12h
24h
0059h
"Y"
13h
26h
0002h Primary Algorithm Command Set and Control Interface ID code
16 bit ID code defining a specific algorithm
AMD
Compatible
14h
28h
0000h
15h
2Ah
0040h Address for Primary Algorithm extended Query table (see
Table 27)
P = 40h
16h
2Ch
0000h
17h
2Eh
0000h Alternate Vendor Command Set and Control Interface ID Code
second vendor - specified algorithm supported
NA
18h
30h
0000h
19h
32h
0000h
Address for Alternate Algorithm extended Query table
NA
1Ah
34h
0000h
Table 25.
CFI Query System Interface Information
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
1Eh
3Ch
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.5V
1Fh
3Eh
0004h Typical timeout per single byte/word program = 2n µs
16µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
NA
21h
42h
000Ah Typical timeout per individual Block Erase = 2n ms
1s
22h
44h
0000h Typical timeout for full Chip Erase = 2n ms
NA
23h
46h
0004h Maximum timeout for byte/word program = 2n times typical
256µs
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h Maximum timeout per individual Block Erase = 2n times typical
8s
26h
4Ch
0000h Maximum timeout for Chip Erase = 2n times typical
NA


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