M29DW641F datasheet(16/80 Pages) NUMONYX

Part #	M29DW641F

Description	64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

Download	80 Pages

Scroll/Zoom	100%

Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

Logo

16 / 80 page

Bus Operations

M29DW641F

16/80

3

Bus Operations

There are five standard Bus Operations that control the device. These are Bus Read

(Random and Page modes), Bus Write, Output Disable, Standby and Automatic Standby.

Dual Operations are possible in the M29DW641F, thanks to their multiple bank architecture.

While programming or erasing in one banks, Read Operations are possible in any of the

other banks. Write Operations are only allowed in one bank at a time.

See

Table 3: Bus Operations, for a summary. Typically glitches of less than 5ns on Chip

Enable, Write Enable, and Reset/Block Temporary Unprotect pins are ignored by the

memory and do not affect Bus Operations.

3.1

Bus Read

Bus Read Operations read from the memory cells, or specific registers in the Command

Interface. To speed up the Read Operation the memory array can be read in Page mode

where data is internally read and stored in a page buffer. The Page has a size of 8 Words

and is addressed by the address inputs A0-A2.

A valid Bus Read Operation involves setting the desired address on the Address Inputs,

applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write Enable

High, VIH. The Data Inputs/Outputs will output the value, see Figure 11: Random Read AC

waveforms, Figure 12: Page Read AC waveforms, and Table 20: Read AC characteristics,

for details of when the output becomes valid.

3.2

Bus Write

Bus Write Operations write to the Command Interface. A valid Bus Write Operation begins

by setting the desired address on the Address Inputs. The Address Inputs are latched by the

Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs

last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of

Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,

during the whole Bus Write Operation. See

Figure 13 and Figure 14, Write AC Waveforms,

and

Table 21 and Table 22, Write AC Characteristics, for details of the timing requirements.

3.3

Output Disable

The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.

3.4

Standby

When Chip Enable is High, VIH, the memory enters Standby mode and the Data

Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply current to

the Standby Supply current, ICC2, Chip Enable should be held within VCC ± 0.2V. For the

Standby current level see

Table 19: DC characteristics.

During program or Erase Operations the memory will continue to use the Program/Erase

Supply current, ICC3, for Program or Erase Operations until the operation completes.

Similar Part No. - M29DW641F

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	M29DW640D	945Kb / 55P	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
	M29DW640D70N1	945Kb / 55P	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
	M29DW640D70N1	1Mb / 15P	FLASH NOR HIGH DENSITY & CONSUMER
	M29DW640D70N1E	945Kb / 55P	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
	M29DW640D70N1E	1Mb / 15P	FLASH NOR HIGH DENSITY & CONSUMER

More results

Similar Description - M29DW641F

Manufacturer	Part #	Datasheet	Description
Numonyx B.V	M29DW640F	1Mb / 74P	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
STMicroelectronics	M29DW640D	945Kb / 55P	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
	M28W640ECT	838Kb / 55P	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
	M28W640CT	393Kb / 54P	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
	M28W640FCB	1Mb / 55P	64 Mbit (4Mb x16, Boot Block) 3V Supply Flash Memory
	M29W640FT	478Kb / 72P	64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
Numonyx B.V	M29W640FT	1Mb / 71P	64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
STMicroelectronics	M58WR064FT	573Kb / 87P	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
	M29W640DT	945Kb / 49P	64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
	M29W641DH	641Kb / 42P	64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

More results

M29DW641F Datasheet(PDF) 16 Page - Numonyx B.V

M29DW641F Datasheet(HTML) 16 Page - Numonyx B.V

Similar Part No. - M29DW641F

Similar Description - M29DW641F

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80

Datasheet Download

Link URL