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M29DW641F Datasheet(PDF) 67 Page - Numonyx B.V

Part # M29DW641F
Description  64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M29DW641F Datasheet(HTML) 67 Page - Numonyx B.V

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M29DW641F
Common Flash Interface (CFI)
67/80
Table 31.
CFI Query System Interface Information
Address
Data
Description
Value
1Bh
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
1Eh
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.5V
1Fh
0004h
Typical timeout per single byte/Word program = 2n µs
16µs
20h
0000h
Typical timeout for minimum size write buffer program = 2n µs
NA
21h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
0000h
Typical timeout for full Chip Erase = 2n ms
NA
23h
0004h
Maximum timeout for byte/Word program = 2n times typical
256 µs
24h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
0003h
Maximum timeout per individual block erase = 2n times typical
8s
26h
0000h
Maximum timeout for Chip Erase = 2n times typical
NA


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