M29DW641F datasheet(49/80 Pages) NUMONYX

Part #	M29DW641F

Description	64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

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Manufacturer	NUMONYX [Numonyx B.V]

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49 / 80 page

M29DW641F

DC and AC parameters

49/80

Table 18.

Device capacitance

Symbol

Parameter(1)

1.

Sampled only, not 100% tested.

Test condition

Min

Max

Unit

CIN

Input capacitance

VIN = 0V

6

pF

COUT

Output capacitance

VOUT = 0V

12

pF

Table 19.

DC characteristics

Symbol

Parameter

Test condition

Min

Max

Unit

ILI

Input Leakage current

0V

≤VIN ≤VCC

±1

µ

A

ILO

Output Leakage current

0V

≤VOUT ≤VCC

±1

µ

A

ICC1

(1)

1.

In Dual Operations the Supply current will be the sum of ICC1(read) and ICC3 (program/erase).

Supply current (Read)

E = VIL, G = VIH,

f = 6MHz

10

mA

ICC2

Supply current (Standby)

E = VCC ±0.2V,

RP = VCC ±0.2V

100

µ

A

ICC3

(1)(2)

2.

Sampled only, not 100% tested.

Supply current

(Program/Erase)

Program/Erase

Controller active

VPP/WP =

VIL or VIH

20

mA

VPP/WP =

VPPH

20

mA

VIL

Input Low voltage

–0.5

0.8

V

VIH

Input High voltage

0.7VCC

VCC +0.3

V

VPPH

Voltage for Fast Program

Acceleration

VCC = 2.7V ±10%

11.5

12.5

V

IPP

Current for Fast Program

Acceleration

VCC =2.7V ±10%

15

mA

VOL

Output Low voltage

IOL = 1.8mA

0.45

V

VOH

Output High voltage

IOH = –100µAVCC –0.4

V

VID

Identification voltage

11.5

12.5

V

VLKO

Program/Erase Lockout

Supply voltage

1.8

2.3

V

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