M29DW128F datasheet(48/94 Pages) NUMONYX

Part #	M29DW128F

Description	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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Command interface

M29DW128F

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Table 17.

Protection Command Addresses

Bit

Condition

Address Inputs A7-A0

Other Address Inputs

Password Protection Mode Lock bit Address

(PL)

RP at VIH

00001010

X

RP at VID

10001010

X

Standard Protection Mode Lock bit Address (SL)

00010010

X

Non-Volatile Modify Protection bit Address (NVMP)

00000010

Block Protection Group

Address

Extended Block Protection bit Address (OW)

00011010

X

Table 18.

Program, Erase Times and Program, Erase Endurance Cycles

Parameter

Min

Typ(1)(2)

Max(2)

Unit

Chip Erase

80

400(3)

s

Block Erase (64 kbytes)

0.8

6(4)

s

Erase Suspend Latency Time

50(4)

µs

Byte Program

Single or Multiple byte Program

(1, 2, 4 or 8 bytes at-a-time)

10

200(3)

µs

Write to Buffer and Program

(64 bytes at-a-time)

VPP/WP =VPPH

90

700(3)

µs

VPP/WP=VIH

280

1400(3)

µs

Word Program

Single or Multiple Word Program

(1, 2 or 4 Words at-a-time)

10

200(3)

µs

Write to Buffer and Program

(32 Words at-a-time)

VPP/WP=VPPH

90

700(3)

µs

VPP/WP=VIH

280

1400(3)

µs

Chip Program (byte by byte)

80

400(3)

s

Chip Program (Word by Word)

40

200(3)

s

Chip Program (Quadruple byte or Double Word)

20

100(3)

s

Chip Program (Octuple byte or Quadruple Word)

10

50(3)

s

Program Suspend Latency Time

5

15

µs

Program/Erase Cycles (per Block)

100,000

cycles

Data Retention

20

years

1.

Typical values measured at room temperature and nominal voltages.

2.

Sampled, but not 100% tested.

3.

Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4.

Maximum value measured at worst case conditions for both temperature and VCC.

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