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M28W160ECT Datasheet(PDF) 22 Page - Numonyx B.V

Part # M28W160ECT
Description  16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M28W160ECT Datasheet(HTML) 22 Page - Numonyx B.V

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Table 14. DC Characteristics
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤VIN ≤VDDQ
±1
µA
ILO
Output Leakage Current
0V
≤VOUT
≤VDDQ
±10
µA
IDD
Supply Current (Read)
E = VSS, G = VIH, f = 5MHz
918
mA
IDD1
Supply Current (Stand-by or
Automatic Stand-by)
E = VDDQ ± 0.2V,
RP = VDDQ ± 0.2V
15
50
µA
IDD2
Supply Current
(Reset)
RP = VSS ± 0.2V
15
50
µA
IDD3
Supply Current (Program)
Program in progress
VPP = 12V ± 5%
510
mA
Program in progress
VPP = VDD
10
20
mA
IDD4
Supply Current (Erase)
Erase in progress
VPP = 12V ± 5%
520
mA
Erase in progress
VPP = VDD
10
20
mA
IDD5
Supply Current
(Program/Erase Suspend)
E = VDDQ ± 0.2V,
Erase suspended
15
50
µA
IPP
Program Current
(Read or Stand-by)
VPP > VDD
400
µA
IPP1
Program Current
(Read or Stand-by)
VPP
≤VDD
15
µA
IPP2
Program Current (Reset)
RP = VSS ± 0.2V
15
µA
IPP3
Program Current (Program)
Program in progress
VPP = 12V ± 5%
110
mA
Program in progress
VPP = VDD
15
µA
IPP4
Program Current (Erase)
Erase in progress
VPP = 12V ± 5%
310
mA
Erase in progress
VPP = VDD
15
µA
VIL
Input Low Voltage
–0.5
0.4
V
VDDQ
≥ 2.7V
–0.5
0.8
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ +0.4
V
VDDQ
≥ 2.7V
0.7 VDDQ
VDDQ +0.4
V
VOL
Output Low Voltage
IOL = 100µA, VDD = VDD min,
VDDQ = VDDQ min
0.1
V
VOH
Output High Voltage
IOH = –100µA, VDD = VDD min,
VDDQ = VDDQ min
VDDQ –0.1
V
VPP1
Program Voltage (Program or
Erase operations)
1.65
3.6
V
VPPH
Program Voltage
(Program or Erase
operations)
11.4
12.6
V
VPPLK
Program Voltage
(Program and Erase lock-out)
1V
VLKO
VDD Supply Voltage (Program
and Erase lock-out)
2V


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