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L9613B013TR Datasheet(PDF) 8 Page - STMicroelectronics |
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L9613B013TR Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 10 page  VS = 12V 50 Ω 10kHz 510 Ω 136 Ω 68 Ω 1.5nF = 40dB Pimax =5W Rhode & Schwartz SMG 0.1 - 1000MHz NAP Probe NAP - 73 RX VS K U713 VS TX K U713 ∆≤± 10% Signal comparison ∆ Pi EMS Performance (ISO 9141 BUS system) Figure 7. 10000 5000 1000 100 1 10 100 1000 not incident power resistant incident power resistant Pi(mW) f (MHz) Figure 8. ESD application hints To improve the ESD robustness of this device above specified ±2KV/HBM external blocking ca- pacitors must be used. Nevertheless the max. en- ergy which can be clamped by this device should not exceeds 0.2mJ for each pin. An equivalent in- put diagram for calculation can be seen in fig. 9. ESD duscharge model EESD = 1 2 CHBM UESD 2 = 0.2mJ + 1 2 CEXT ⋅ (45V)2 100pF 1.5k Ω 45V 45V E ≤ 0.2mJ HBM C R HBM C ext Figure 9. L9613B 8/10 |
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