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SA58670 Datasheet(PDF) 18 Page - NXP Semiconductors |
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SA58670 Datasheet(HTML) 18 Page - NXP Semiconductors |
18 / 25 page SA58670_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 4 January 2008 18 of 25 NXP Semiconductors SA58670 2.1 W/channel stereo class-D audio amplifier 11.5 Efficiency and thermal considerations The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In Table 3 “Limiting values”, the power derating factor is given as 41.6 mW/K. The device thermal resistance, Rth(j-a) is the reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by Equation 3: (3) For a maximum allowable junction temperature Tj = 150 °C and Rth(j-a) = 24 K/W and a maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel output power, 4 Ω load, 5 V supply, the maximum ambient temperature is calculated using Equation 4: (4) The maximum ambient temperature is 114 °C at maximum power dissipation for 5 V supply and 4 Ω load. If the junction temperature of the SA58670 rises above 150 °C, the thermal protection circuitry turns the SA58670 off; this prevents damage to IC. Using speakers greater than 4 Ω further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency. 11.6 Additional thermal information The SA58670 HVQFN20 package incorporates an exposed DAP that is designed to solder the mount directly to the PCB heat spreader. By the use of thermal vias, the DAP may be soldered directly to a ground plane or special heat sinking layer designed into the PCB. The thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lowest package thermal resistance. R th j-a () 1 derating factor ------------------------------------------ 1 0.0416 ---------------- 24 K /W == = T amb max () T j max () R th j-a () P max × () – 150 24 1.5 × () – 114 °C == = |
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