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STD20NF20 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STD20NF20
Description  N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD20NF20 Datasheet(HTML) 5 Page - STMicroelectronics

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STD20NF20 - STF20NF20 - STP20NF20
Electrical characteristics
5/16
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
18
72
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 20 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100A/µs
VDD = 50V, Tj = 25°C
(see Figure 19)
155
775
10
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see Figure 19)
183
1061
11.6
ns
nC
A


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