STD20NF20 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STD20NF20

Description	N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

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Electrical characteristics

STD20NF20 - STF20NF20 - STP20NF20

4/16

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

200

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC = 125°C

1

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 10 A

0.10

0.125

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward

transconductance

VDS = 25 V, ID= 10 A

13

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz, VGS = 0

940

197

30

pF

td(on)

tr

td(off)

tr

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 100 V, ID = 10 A,

RG= 4.7 Ω VGS = 10 V

(see Figure 14)

15

30

40

10

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160V, ID = 20 A,

VGS = 10V

(see Figure 15)

28

5.6

14.5

39

nC

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