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BDX53B Datasheet(PDF) 2 Page - STMicroelectronics |
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BDX53B Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symbo l Parameter Test Con ditions Min. T yp. Max. Unit ICBO Collector Cut -of f Current (IE =0) for BDX53B/54B VCB =80 V for BDX53C/54C VCB =100V 0. 2 0. 2 mA mA ICEO Collector Cut -of f Current (IB =0) for BDX53B/54B VCE =40 V for BDX53C/54C VCE =50V 0. 5 0. 5 mA mA IEBO Emitter Cut-off Current (IC =0) VEB =5 V 2 mA VCEO(s us) ∗ Collector-Emitter Sustaining Voltage (IB =0) IC =100 mA for BDX53B/ 54B for BDX53C/54C 80 100 V V VCE(sat) ∗ Collector-emitter Sat uration Volt age IC =3 A I B =12 mA 2 V VBE(sat) ∗ Base-emitter Sat uration Volt age IC =3 A I B =12 mA 2. 5 V hFE ∗ DC Current Gain IC =3 A VCE = 3 V 750 VF ∗ Parallel-diode Forward Voltage IF =3 A IF =8 A 1.8 2.5 2. 5 V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curve BDX53B - BDX53C - BDX54B - BDX54C 2/6 |
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