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BDX53B Datasheet(PDF) 2 Page - STMicroelectronics

Part # BDX53B
Description  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BDX53B Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
2.08
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
ICBO
Collector Cut -of f
Current (IE =0)
for BDX53B/54B
VCB =80 V
for BDX53C/54C
VCB =100V
0. 2
0. 2
mA
mA
ICEO
Collector Cut -of f
Current (IB =0)
for BDX53B/54B
VCE =40 V
for BDX53C/54C
VCE =50V
0. 5
0. 5
mA
mA
IEBO
Emitter Cut-off Current
(IC =0)
VEB =5 V
2
mA
VCEO(s us)
∗ Collector-Emitter
Sustaining Voltage
(IB =0)
IC =100 mA
for BDX53B/ 54B
for BDX53C/54C
80
100
V
V
VCE(sat)
∗ Collector-emitter
Sat uration Volt age
IC =3 A
I B =12 mA
2
V
VBE(sat)
∗ Base-emitter
Sat uration Volt age
IC =3 A
I B =12 mA
2. 5
V
hFE
DC Current Gain
IC =3 A
VCE = 3 V
750
VF
Parallel-diode Forward
Voltage
IF =3 A
IF =8 A
1.8
2.5
2. 5
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
Derating Curve
BDX53B - BDX53C - BDX54B - BDX54C
2/6


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