BDX53B / BDX53C

BDX54B / BDX54C

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

APPLICATIONS

s

AUDIO AMPLIFIERS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The

BDX53B

and

BDX53C

are

silicon

Epitaxial-Base

NPN

power

transistors

in

monolithic Darlington configuration mounted in

Jedec TO-220 plastic package. They are intented

for use in hammer drivers, audio amplifiers and

other

medium

power

linear

and

switching

applications.

The complementary PNP types are BDX54B and

BDX54C respectively.

®

INTERNAL SCHEMATIC DIAGRAM

September 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Un it

NPN

BDX53B

BDX53C

PNP

BDX54B

BDX54C

80

100

V

80

100

V

5

V

Collector Current

8

A

Collector Peak Current (repetitive)

12

A

Base Current

0.2

A

60

W

Storage Temperat ure

-65 t o 150

Max. Operating Junction Temperature

150

For PNP types voltage and current values are negative.

1

2

3

TO-220

Ω

Ω

1/6