tm

©2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGPF30N45T Rev. A

December 2007

Absolute Maximum Ratings

Notes:

1: Repetitive test , Pulse width=100usec , Duty=0.1

* Ic_pluse limited by max Tj

Thermal Characteristics

Symbol

Description

Ratings

Units

Collector to Emitter Voltage

450

V

Gate to Emitter Voltage

±30

V

Pulsed Collector Current

120

A

Maximum Power Dissipation

50.4

W

Maximum Power Dissipation

20.1

W

Operating Junction Temperature

-55 to +150

Storage Temperature Range

-55 to +150

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction to Case

-

2.48

Thermal Resistance, Junction to Ambient

-

62.5

TO-220F

1.Gate

2.Collector

3.Emitter

1

G

C

E

FGPF30N45T

450V, 30A PDP Trench IGBT

Features

• High Current Capability

• High input impedance

• Fast switching

•RoHS complaint

Applications

• PDP System

General Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of

trench IGBTs offer the optimum performance for PDP applica-

tions where low conduction and switching losses are essential.