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FGPF30N45T Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGPF30N45T Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  2 www.fairchildsemi.com FGPF30N45T Rev. A Package Marking and Ordering Information Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGPF30N45T FGFP30N45TTU TO-220F Rail / Tube 50ea - Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 450 - - V ∆BV CES ∆T J Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA -0.5 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 3.0 4.5 5.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V -1.35 1.6 IC = 30A, VGE = 15V -1.55 - V IC = 30A, VGE = 15V, TC = 125 oC -1.53 - V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 1610 - pF Coes Output Capacitance - 88 - pF Cres Reverse Transfer Capacitance - 68 - pF Switching Characteristics td(on) Turn-On Delay Time VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 25 oC -19 - ns tr Rise Time - 57 - ns td(off) Turn-Off Delay Time - 119 - ns tf Fall Time - 220 330 ns td(on) Turn-On Delay Time VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 125 oC -20 - ns tr Rise Time - 60 - ns td(off) Turn-Off Delay Time - 122 - ns tf Fall Time - 265 - ns Qg Total Gate Charge VCE = 200V, IC = 30A, VGE = 15V -73 - nC Qge Gate to Emitter Charge - 11 - nC Qgc Gate to Collector Charge - 33 - nC |
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