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1N5819 Datasheet(PDF) 4 Page - STMicroelectronics |
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1N5819 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 5 page ![]() 1N581x 4/5 0 5 10 15 20 25 30 1E-3 1E-2 1E-1 1E+0 1E+1 IR(mA) 1N5817 1N5818 VR(V) Tj=100°C Tj=25°C Tj=125°C Fig. 8-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818). 0 5 10 15 20 30 35 40 1E-3 1E-2 1E-1 1E+0 1E+1 IR(mA) VR(V) Tj=100°C Tj=25°C Tj=125°C Fig. 8-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5819). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.01 0.10 1.00 10.00 IFM(A) VFM(V) Tj=25°C Tj=100°C Tj=125°C Fig. 9-1: Forward voltage drop versus forward current (typical values) (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.01 0.10 1.00 10.00 IFM(A) VFM(V) Tj=25°C Tj=100°C Tj=125°C Fig. 9-2: Forward voltage drop versus forward current (typical values) (1N5819). 1 10 100 1000 0 5 10 15 20 25 30 IFSM(A) Number of cycles F=50Hz Tj initial=25°C Fig. 10: Non repetitive surge peak forward current versus number of cycles. |
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