IS-2981RH, IS-2981EH

FN4869 Rev 1.00

Page 3 of 4

Jun 24, 2013

Die Characteristics

DIE DIMENSIONS:

2667

µm x 5131µm (105 mils x 202 mils)

Thickness: 483

µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS

Glassivation

Type: Nitride (Si3N4) over Silox (SiO2)

Nitride Thickness: 4.0k

Å ± 1.0kÅ

Silox Thickness: 12.0k

Å ±4.0kÅ

Metallization

Top Metal 2: Ti/AlCu

Thickness: 1.6

µm ±

0.02µm

Metal 1: Ti/AlCu

Thickness: 0.8

µm ±

0.01µm

Substrate

HVTDLM, Bonded Wafer, Dielectric Isolation

Backside Finish

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential

Must be tied to GND.

ADDITIONAL INFORMATION

Worst Case Current Density

<1.0 x 105 A/cm2

Transistor Count

68

Metallization Mask Layout

IS-2981RH, IS-2981EH

87

6

5

4

3

2

1

9

9

10

11

12

13

14

15

16

17

18

10

10A

9

9

NOTES:

4. Pad numbers correspond to package pin functions.

5. Bond to all four pad 9 locations for VCC current sharing purposes.

6. Bond to both pad 10 locations for GND current sharing purposes.

7. Pad 10A is not used in die applications.

8. Die backside must be connected to GND.