M4T28-BR12SH1 datasheet(21/28 Pages) STMICROELECTRONICS

Part #	M4T28-BR12SH1

Description	3.3V, 256Kbit (32Kbit x 8) TIMEKEEPER짰 SRAM

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M48T35AV

DC and AC parameters

21/28

Table 10.

Power down/up AC characteristics

Table 11.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

1.

Valid for ambient operating temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where

noted).

Min

Max

Unit

tPD

E or W at VIH before power down

0

µs

tF

(2)

2.

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after

VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC fall time

300

µs

tFB

(3)

3.

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC fall time

150

µs

tR

VPFD (min) to VPFD (max) VCC rise time

10

µs

tRB

VSS to VPFD (min) VCC Rise Time

1

µs

trec

VPFD (max) to inputs recognized

40

200

ms

Symbol

Parameter(1)(2)

1.

Valid for ambient operating temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where

noted).

2.

All voltages referenced to VSS.

Min

Typ

Max

Unit

VPFD

Power-fail deselect voltage

2.7

2.9

3.0

V

VSO

Battery back-up switchover voltage

VPFD –100mV

V

tDR

(3)

3.

At 25°C, VCC = 0V.

Expected data retention time

10(4)

4.

CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ).

YEARS

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M4T28-BR12SH1 Datasheet(PDF) 21 Page - STMicroelectronics

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