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2SC5858 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SC5858 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
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5 / 6 page  2SC5858 2006-11-22 5 Case temperature Tc (°C) PC – Tc 0 0 25 75 100 125 150 50 150 200 250 100 50 Infinite heat sink Collector-emitter voltage VCE (V) Reverse Bias – Safe Operating Area 100 0.1 0.001 10 10000 10 100 1 0.01 1000 Ta = 25℃ Non repeated pulse IB2 = −3A L = 500 μH VCBO max IC max (Pulse) 495V,44A 1700V,30mA rth(j-c) – tw Pulse width tw (s) 10 0.001 10μ 1000 100μ 1m 100m 10 100 0.01 1 0.1 10m 1 Tc = 25℃ (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) Collector-emitter voltage VCE (V) Safe Operating Area 0.01 100 1 100 1000 10 1 10 0.1 1 ms* 10 ms* VCEO max 100 μs* 100 ms* IC max (Continuous)* 10 μs* DC operation Tc = 25°C *:Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (Pulse)* |
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