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2SC5858 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC5858 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SC5858 2006-11-22 4 Collector current IC (A) VCE (sat) – IC 100 1 10 0.1 0.01 10 1 Common emitter Tc = 25℃ 8 6 10 IC/IB = 4 Collector current IC (A) VCE (sat) – IC 10 0.1 0.01 1 100 1 10 Common emitter Tc = 100℃ 8 6 10 IC/IB = 4 Base current IB (A) VCE – IB 0 8 6 2 4 10 16 Ic = 17 A 15 Common emitter Tc = −25℃ 7 4.0 0 0.8 1.6 3.2 2.4 8 9 10 11 12 13 14 Base current IB (A) VCE – IB Common emitter Tc = 25℃ 0 8 6 2 4 10 4.0 0 0.8 1.6 3.2 2.4 16 Ic = 17 A 15 7 8 9 10 11 12 13 14 VCE(sat) – IC Collector current IC (A) 0.01 1 1 0.1 10 10 100 6 10 Common emitter Tc = −25℃ IC/IB = 4 8 Base current IC (A) VCE – IB 4.0 0 0.8 1.6 3.2 0 8 6 2 4 10 16 Ic = 17 A 15 7 8 9 10 11 12 14 2.4 Common emitter Tc = 100℃ |
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