SSM6K32TU

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6K32TU

○

Relay drive, DC/DC converter application

4Vdrive

Low on resistance:

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

60

V

Gate-Source voltage

±20

V

DC

2

Drain current

Pulse

6

A

Drain power dissipation

500

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm

× 25.4 mm × 1.6 t, Cu Pad: 645 mm

2

)

Electrical Characteristics (Ta = 25℃)

Unit: mm

1,2,5,6 : Drain

3

: Gate

4

: Source

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-2T1D

Weight: 7.0 mg (typ.)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

―

―

±10

μ

A

Drain cut-off current

―

―

100

μ

A

Drain-Source breakdown voltage

60

―

―

V

Gate threshold voltage

0.8

―

2.0

V

―

0.33

0.44

Drain-Source ON resistance

―

0.23

0.30

Ω

Forward transfer admittance

1.0

2.0

―

S

Input capacitance

―

140

―

Reverse transfer capacitance

―

20

―

Output capacitance

f = 1MHz

―

65

―

pF

Rise time

―

140

―

Turn-on time

―

210

―

Fall time

―

470

―

Switching time

Turn-off time

―

1600

―

ns

Total gate charge

―

5.0

―

Gate−source charge

―

3.6

―

Gate−drain charge

―

1.4

―

nC

Drain-Source forward voltage

―

―

−1.5

V