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TLP202A Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP202A Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page TLP202A 2007-10-01 2 Absolute Maximum Rating (Ta = 25°C) Characteristics Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta >= 25°C) ΔIF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V LED Junction temperature Tj 125 °C Off-state output terminal voltage VOFF 60 V On-state current ION 400 mA Forward current derating (Ta >= 25°C) ΔION/°C −4.0 mA/°C Detector Junction temperature Tj 125 °C Storage temperature Tstg −55 to 125 °C Operating temperature Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min, R.H. <= 60%) (Note 1) BVS 1500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ⎯ ⎯ 48 V Forward current IF 5 7.5 25 mA On-state current ION ⎯ ⎯ 400 mA Operating temperature Topr −20 ⎯ 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. |
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