S4111-35Q datasheet(1/4 Pages) HAMAMATSU

Part #	S4111-35Q

Description	Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR

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Manufacturer	HAMAMATSU [Hamamatsu Corporation]

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S4111/S4114 series

S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily

developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all

elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity.

Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window.

PHOTODIODE

Si photodiode array

16, 35, 46 element Si photodiode array for UV to NIR

Features

l Large active area

l Low cross-talk

l Wide spectral response range

l High UV sensitivity

l Wide linearity

l S4111 series: Enhanced infrared sensitivity,

low dark current

l S4114 series: Low terminal capacitance,

high-speed response

Applications

l Multichannel spectrophotometers

l Color analyzers

l Light spectrum analyzers

l Light position detection

s General ratings / Absolute maximum ratings

Absolute maximum ratings

Active area

(per 1 element)

Package

Size

Effective

area

Between

ele m e nts

m eas ur e

Between

ele m e nts

pitch

Reverse

voltage

VR Max.

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Di me nsional

outline/

Wi ndo w

material *

(mm)

(mm

2)

(mm)

Nu m b er

of

ele m e nts

(V)

(°C)

S4111-16Q

➀/Q

S4111-16R

➁/R

18 pin DIP 1.45 × 0.9 1.305

16

S4111-35Q

➂/Q

40 pin DIP

35

S4111-46Q

➃/Q

48 pin DIP

46

S4114-35Q

➂/Q

40 pin DIP

35

S4114-46Q

➃/Q

48 pin DIP

4.4 × 0.9

3.96

0.1

1.0

46

15

-20 to +60

-20 to +80

s Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)

Photo sensitivity

S

Spectral

response

range

λ

Peak

sensitivity

wavelength

λp

λp 200 nm 633 nm

Dark current

ID

Max.

Shunt

resistance

Rsh

VR=10 mV

Terminal

capacitance

Ct

Rise time

tr

RL=1 k

Ω

λ=655 nm

NEP

λ=λp

Type No.

(nm)

(A/W) (A/W) (A/W)

VR=10 m V

(pA)

VR=10 V

(pA)

Min

(G

Ω)

Typ.

(G

Ω)

V R=0 V

(pF)

V R=10 V

(pF)

V R=0 V

(µs)

VR=10 V

(µs)

V R=0 V

(W/Hz1/2)

VR=10 V

(W/Hz1/2)

S4111-16Q

190 to 1100

0.08

0.43

S4111-16R

320 to 1100

-0.39

5

25

2.0

250

200

50

0.5

0.1

4.4 × 10-161.7 × 10-15

S4111-35Q

S4111-46Q

190 to 1100

960

0.58

10

50

1.0

30

550

120

1.2

0.3

1.3 × 10-153.1 × 10-15

S4114-35Q

S4114-46Q

190 to 1000

800

0.50

0.08

0.43

60

300

0.15

2

35

20

0.1

0.05 5.7 × 10

-15 8.0 × 10-15

* Window material R: resin coating, Q: quartz glass

1

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