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SN74V3640 Datasheet(PDF) 30 Page - Texas Instruments |
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SN74V3640 Datasheet(HTML) 30 Page - Texas Instruments |
30 / 50 page SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 × 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 tDS tOLZ No Operation RCLK REN EF OE WEN 1 2 No Operation Last Word tsk1 (see Note A) tref tOLZ tOHZ tENH tENS tDH tENH tENS tDS tDH Last Word tENS tENH tCLKH tCLKL tENS tENH tENH tA tref tA tref tA tOE WCLK Q0–Qn D0–Dn D0 D1 D0 D1 tCLK tENS NOTES: A. tsk1 is the minimum time between a rising WCLK edge and a rising RCLK edge to ensure that EF goes high (after one RCLK cycle + tref). If the time between the rising edge of WCLK and the rising edge of RCLK is less than tsk1, EF deassertion can be delayed one additional RCLK cycle. B. LD = high C. First-data-word latency: tsk1 + 1TRCLK + tREF Figure 5. Read Cycle, Empty Flag, and First-Data-Word Latency Timing (Standard Mode) |
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