SM5010 series

SEIKO NPC CORPORATION —14

5010FH

× series

30

≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.

5010HN

×, HK× series

Parameter

Symbol

Condition

Rating

Unit

min

typ

max

HIGH-level output voltage

3.9

4.2

–

V

LOW-level output voltage

–

0.3

0.5

V

HIGH-level input voltage

INHN

2.0

–

–

V

LOW-level input voltage

INHN

–

–

0.8

V

Output leakage current

Q: Measurement cct 2, INHN = LOW,

––

10

µA

––

10

Current consumption

Measurement cct 3, load cct 1,

5010FHA, FHC

f = 40MHz

–13

26

mA

5010FHD

f = 50MHz

–15

30

5010FHE

f = 60MHz

–17

34

INHN pull-up resistance

Measurement cct 4

40

100

250

k

Ω

Feedback resistance

Measurement cct 5

5010FHA

3.57

4.2

4.83

k

Ω

5010FHC

2.63

3.1

3.57

5010FHD

1.87

2.2

2.53

5010FHE

1.87

2.2

2.53

Built-in capacitance

Design value. A monitor pattern on a

wafer is tested.

5010FHA

11.7

13

14.3

pF

5010FHC

9.9

11

12.1

5010FHD

11.7

13

14.3

5010FHE

7.2

8

8.8

5010FHA

13.5

15

16.5

5010FHC

15.3

17

18.7

5010FHD

15.3

17

18.7

5010FHE

13.5

15

16.5

Parameter

Symbol

Condition

Rating

Unit

min

typ

max

HIGH-level output voltage

3.9

4.2

–

V

LOW-level output voltage

–

0.3

0.4

V

HIGH-level input voltage

INHN

2.0

–

–

V

LOW-level input voltage

INHN

–

–

0.8

V

Output leakage current

Q: Measurement cct 2, INHN = LOW,

––

10

µA

––

10

Current consumption

Measurement cct 3, load cct 2,

5010HK1

–

20

40

mA

Measurement cct 3, load cct 1,

5010HN1

–

25

50

INHN pull-up resistance

Measurement cct 4

40

100

250

k

Ω

Feedback resistance

Measurement cct 5

80

200

500

k

Ω

Built-in capacitance

Design value. A monitor pattern on a wafer is tested.

11.7

13

14.3

pF

15.3

17

18.7