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SOIC-8 PACKAGE THERMAL CHARACTERISTICS

0

25

50

75

100

125

150

175

200

225

250

0

50

100

150

200

T -CaseTemperature-°C

C

V

at3.6V

CC1,2

V

at5.5V

CC1,2

DEVICE FUNCTION TABLE

ISO7220A, ISO7220C, ISO7220M

ISO7221A, ISO7221C, ISO7221M

SLLS755F – JULY 2006 – REVISED AUGUST 2007

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

212

Junction-to-air

High-K Thermal Resistance

122

°C/W

Junction-to-Board Thermal Resistance

37

Junction-to-Case Thermal Resistance

69.1

Device Power Dissipation

ISO722xM

390

mW

Input a 150 Mbps 50% duty cycle square wave

(1)

Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface mount packages.

Figure 5. SOIC-8

INPUT IN

OUTPUT OUT

H

H

PU

PU

L

L

Open

H

PD

PU

X

H

(1)

PU = Powered Up(Vcc

≥ 3.0V); PD = Powered Down (Vcc ≤ 2.5V); X = Irrelevant; H = High Level;

L = Low Level

13

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