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1N5408 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N5408 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) Version: A06 1N5400 - 1N5408 3.0 AMPS. Silicon Rectifiers DO-201AD Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode High temperature soldering guaranteed: 260oC/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension Weight: 1.2 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol 1N 5400 1N 5401 1N 5402 1N 5404 1N 5406 1N 5407 1N 5408 Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @TA = 75 oC I(AV) 3.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 200 A Rating for Fusing (t<8.3ms) I2t 166 A2s Maximum Instantaneous Forward Voltage @ 3.0A VF 1.0 V Maximum DC Reverse Current @ TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC IR 5.0 100 uA uA Maximum Full Load Reverse Current, Full Cycle Average .375”(9.5mm) Lead Length @TL=75 oC HTIR 30 uA Typical Junction Capacitance ( Note 1 ) Cj 50 pF Typical Thermal Resistance ( Note 2 ) RθJA 40 oC/W Operating Temperature Range TJ -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 2. Mount on Cu-Pad Size 16mm x 16mm on P.C.B. |
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