MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS12036

FLAT-BASE TYPE

INSULATED TYPE

Mar. 2002

W

V

N2

T

S

R

P1

P2

U

VD

UP

VP

WP

UN

VN

WN

FO

V(amp)

GND

TH

UV Protection

–

+

Fo Circuit

N1

INTERNAL FUNCTIONS BLOCK DIAGRAM

°C)

INVERTER PART

CONVERTER PART

CONTROL PART

(Fig. 2)

Condition

Symbol

Item

Ratings

Unit

Applied between P2-N2

Applied between P2-N2, Surge-value

Applied between P2-U.V.W, U.V.W-N2

Applied between P2-U.V.W, U.V.W-N2

(Pulse)

±Ic(±Icp)

Supply voltage

Supply voltage (surge)

Each IGBT collector-emitter static voltage

Each IGBT collector-emitter switching

voltage

Each IGBT collector current

900

1000

1200

1200

±15 (±30)

V

V

V

V

A

Condition

Symbol

Item

Ratings

Unit

3

φ rectifying circuit

1 cycle at 60Hz, peak value non-repetitive

Value for one cycle of surge current

Ea

Repetitive peak reverse voltage

Recommended AC input voltage

DC output current

Surge (non-repetitive) forward current

1600

440

12

120

60

V

Vrms

A

A

Symbol

Item

Ratings

Unit

Supply voltage

Input signal voltage

Fault output supply voltage

Fault output current

DC-Link IGBT current signal Amp output current

–0.5 ~ 20

–0.5 ~ +7.5

–0.5 ~ +7.5

15

1

V

V

V

mA

mA