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CY7C199N
Document #: 001-06493 Rev. **
Page 5 of 10
tHZCE
CE HIGH to High-Z[8, 9]
11
15
15
ns
tPU
CE LOW to Power-up
0
0
0
ns
tPD
CE HIGH to Power-down
20
20
25
ns
Write Cycle[10,11]
tWC
Write Cycle Time
25
35
55
ns
tSCE
CE LOW to Write End
18
22
22
ns
tAW
Address Set-up to Write End
20
30
40
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
18
22
22
ns
tSD
Data Set-up to Write End
10
15
15
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE
WE LOW to High-Z[9]
11
15
15
ns
tLZWE
WE HIGH to Low-Z[8]
3
3
3
ns
Switching Characteristics Over the Operating Range [3, 7]
Parameter
Description
7C199-25
7C199-35
7C199-55
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Switching Waveforms
Read Cycle No. 1[12, 13]
Read Cycle No. 2 [13, 14]
Notes:
12. Device is continuously selected. OE, CE = VIL.
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
ADDRESS
DATA OUT
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
tHZOE
tHZCE
tPD
OE
CE
HIGH
VCC
SUPPLY
CURRENT
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