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AP9918H Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

Part # AP9918H
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9918H Datasheet(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low on-resistance
BVDSS
20V
▼ Capable of 2.5V gate drive
RDS(ON)
14mΩ
▼ Low drive current
ID
45A
▼ Surface mount package
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=125℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
48
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.38
Continuous Drain Current, VGS @ 4.5V
20
Pulsed Drain Current
1
140
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
45
Parameter
Rating
Drain-Source Voltage
20
200227032
AP9918H/J
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
± 12
G
D
S
TO-251(J)
G
D S
TO-252(H)
G
D
S


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