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AP9918H Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9918H Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 6 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low on-resistance BVDSS 20V ▼ ▼ ▼ ▼ Capable of 2.5V gate drive RDS(ON) 14mΩ ▼ ▼ ▼ ▼ Low drive current ID 45A ▼ ▼ ▼ ▼ Surface mount package Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=125℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.6 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 48 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.38 Continuous Drain Current, VGS @ 4.5V 20 Pulsed Drain Current 1 140 Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V 45 Parameter Rating Drain-Source Voltage 20 200227032 AP9918H/J The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 12 G D S TO-251(J) G D S TO-252(H) G D S |
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