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SPS-8T Datasheet(PDF) 2 Page - Seoul Semiconductor |
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SPS-8T Datasheet(HTML) 2 Page - Seoul Semiconductor |
2 / 2 page SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keum Chun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 - 2 - SPS-8T 4 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Rating Unit Forward Current IF 50 ㎃ Emitter Reverse Voltage VR 5 V Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 5 V Collector Current IC 20 ㎃ Detector Collector Power Dissipation PC 100 ㎽ Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Soldering Temperature Tsol 260 (for 5sec) ℃ 1 Soldering conditions: Soldering iron: Temperature at tip of iron: 280℃max (30W max) Soldering time: 3sec. Max. 4 Electro-Optical Characteristics (Ta=25℃) Parameter Symbol Condition Min Typ Max Unit Forward Voltage VF IF=20㎃ - 1.3 1.5 V Reverse Current IR VR=5V - 0.01 10 ㎂ Emitter Peak Emission Wavelength λP IF=20㎃ - 940 - ㎚ Light Current IL VCE=10V IF=20㎃ 0.5 - - ㎃ Collector Dark Current ICEO VCE=10V - - 0.2 ㎂ C-E Saturation Voltage VCE(SAT) IC=0.1㎃ IF=20㎃ - 0.1 0.4 V Detector Peak Sensitivity Wavelength λP - - 800 - ㎚ tr - 5 - ㎲ Response Time: Rise Time Fall Time tf VCE=5V IL=2㎃ RL=100 Ω - 6 - ㎲ |
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