GT2530

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ISSUED DATE :2006/01/23

REVISED DATE :

G

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial surface mount applications.

Features

*Low Gate Change

*Low On-resistance

*RoHS Compliant

Package Dimensions

Millimeter

Dimensions

REF.

Min.

Max.

REF.

Millimeter

A

2.70

3.10

G

1.90 REF.

B

2.60

3.00

H

1.20 REF.

C

1.40

1.80

I

0.12 REF.

D

0.30

0.55

J

0.37 REF.

E

0

0.10

K

0.60 REF.

F

0°

10°

L

0.95 REF.

Absolute Maximum Ratings

Ratings

Parameter

Symbol

N-channel P-channel

Unit

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

±20

±20

V

3.3

-2.3

A

2.6

-1.8

A

10

-10

A

Total Power Dissipation

1.14

W

Linear Derating Factor

0.01

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-a

110

/

: W

Pb Free Plating Product

30V

3.3A

-30V

-2.3A