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GT2530 Datasheet(PDF) 3 Page - GTM CORPORATION |
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GT2530 Datasheet(HTML) 3 Page - GTM CORPORATION |
3 / 7 page GT2530 Page: 3/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.03 - V/ : Reference to 25 , I : D=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 2 - S VDS=-5V, ID=-2A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current(Tj=25 ) : - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70 ) : IDSS - - -25 uA VDS=-24V, VGS=0 - - 150 VGS=-10V, ID=-2A Static Drain-Source On-Resistance2 RDS(ON) - - 280 m VGS=-4.5V, ID=-1A Total Gate Charge2 Qg - 3 5 Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=-2A VDS=-25V VGS=-4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 17 - Fall Time Tf - 4 - ns VDS=-15V ID=-1A VGS=-5V RG=3.3 RD=15 Input Capacitance Ciss - 150 240 Output Capacitance Coss - 50 - Reverse Transfer Capacitance Crss - 40 - pF VGS=0V VDS=-25V f=1.0MHz Gate Resistance Rg - 8 12 f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.3 V IS=-0.9A, VGS=0V Reverse Recovery Time Trr - 15 - ns Reverse Recovery Charge Qrr - 7 - nC IS=-2A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. : |
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