GT2530

Page: 3/7

ISSUED DATE :2006/01/23

REVISED DATE :

P-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.03

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

-1.0

-

-3.0

V

Forward Transconductance

-

2

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

-25

uA

-

-

150

-

-

280

m

-

3

5

Gate-Source Charge

-

1

-

Gate-Drain (“Miller”) Change

-

2

-

nC

-

6

-

Rise Time

-

8

-

Turn-off Delay Time

-

17

-

Fall Time

-

4

-

ns

Input Capacitance

-

150

240

Output Capacitance

-

50

-

Reverse Transfer Capacitance

-

40

-

pF

f=1.0MHz

Gate Resistance

-

8

12

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.3

V

Reverse Recovery Time

-

15

-

ns

Reverse Recovery Charge

-

7

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

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