GSS4565

Page: 3/7

ISSUED DATE :2005/07/27

REVISED DATE :2005/09/29B

P-Channel Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-40

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.03

-

V/ :

Gate Threshold Voltage

-1.0

-

-3.0

V

Forward Transconductance

-

10

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-25

uA

-

-

33

-

-

42

m Ł

-

20

32

Gate-Source Charge

-

4

-

Gate-Drain (“Miller”) Change

-

10

-

nC

-

11

-

Rise Time

-

7

-

Turn-off Delay Time

-

67

-

Fall Time

-

43

-

ns

Input Capacitance

-

1440

2300

Output Capacitance

-

250

-

Reverse Transfer Capacitance

-

190

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

-

27

-

ns

Reverse Recovery Charge

-

23

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.