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M58WR064T Datasheet(PDF) 19 Page - STMicroelectronics |
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M58WR064T Datasheet(HTML) 19 Page - STMicroelectronics |
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19 / 81 page  19/81 M58WR064T, M58WR064B COMMAND INTERFACE - FACTORY PROGRAM COMMANDS The Factory Program commands are used to speed up programming. They require VPP to be at VPPH. Refer to Table 7, Factory Program Com- mands, in conjunction with the following text de- scriptions. Double Word Program Command The Double Word Program command improves the programming throughput by writing a page of two adjacent words in parallel. The two words must differ only for the address A0. Programming should not be attempted when VPP is not at VPPH. The command can be executed if VPP is below VPPH but the result is not guaranteed. Three bus write cycles are necessary to issue the Double Word Program command. s The first bus cycle sets up the Double Word Program Command. s The second bus cycle latches the Address and the Data of the first word to be written. s The third bus cycle latches the Address and the Data of the second word to be written and starts the Program/Erase Controller. Read operations in the bank being programmed output the Status Register content after the pro- gramming has started. During Double Word Program operations the bank being programmed will only accept the Read Ar- ray, Read Status Register, Read Electronic Signa- ture and Read CFI Query command, all other commands will be ignored. Dual operations are not supported during Double Word Program oper- ations and the command cannot be suspend- ed.Typical Program times are given in Table 14, Program, Erase Times and Program/Erase Endur- ance Cycles. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the memory locations must be reprogrammed. See Appendix C, Figure 19, Double Word Pro- gram Flowchart and Pseudo Code, for the flow- chart for using the Double Word Program command. Quadruple Word Program Command The Quadruple Word Program command im- proves the programming throughput by writing a page of four adjacent words in parallel. The four words must differ only for the addresses A0 and A1. Programming should not be attempted when VPP is not at VPPH. The command can be executed if VPP is below VPPH but the result is not guaranteed. Five bus write cycles are necessary to issue the Quadruple Word Program command. s The first bus cycle sets up the Double Word Program Command. s The second bus cycle latches the Address and the Data of the first word to be written. s The third bus cycle latches the Address and the Data of the second word to be written. s The fourth bus cycle latches the Address and the Data of the third word to be written. s The fifth bus cycle latches the Address and the Data of the fourth word to be written and starts the Program/Erase Controller. Read operations to the bank being programmed output the Status Register content after the pro- gramming has started. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the memory locations must be reprogrammed. During Quadruple Word Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Sig- nature and Read CFI Query command, all other commands will be ignored. Dual operations are not supported during Quadru- ple Word Program operations and the command cannot be suspended. Typical Program times are given in Table 14, Program, Erase Times and Pro- gram/Erase Endurance Cycles. See Appendix C, Figure 20, Quadruple Word Pro- gram Flowchart and Pseudo Code, for the flow- chart for using the Quadruple Word Program command. Enhanced Factory Program Command The Enhanced Factory Program command can be used to program large streams of data within any one block. It greatly reduces the total program- ming time when a large number of Words are writ- ten to a block at any one time. The use of the Enhanced Factory Program com- mand requires certain operating conditions. s VPP must be set to VPPH s VDD must be within operating range s Ambient temperature, TA must be 25°C ± 5°C s The targeted block must be unlocked Dual operations are not supported during the En- hanced Factory Program operation and the com- mand cannot be suspended. For optimum performance the Enhanced Factory Program commands should be limited to a maxi- mum of 10 program/erase cycles per block. If this limit is exceeded the internal algorithm will contin- ue to work properly but some degradation in per- |
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