G1332E

Page: 2/4

ISSUED DATE :2005/03/10

REVISED DATE :2006/11/24C

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.02

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

0.5

-

1.2

V

Forward Transconductance

-

1

-

S

Gate-Source Leakage Current

-

-

±10

uA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

10

uA

-

-

600

Static Drain-Source On-Resistance

-

-

1200

m

-

1.3

2

Gate-Source Charge

-

0.3

-

Gate-Drain (“Miller”) Change

-

0.5

-

nC

-

4

-

Rise Time

-

10

-

Turn-off Delay Time

-

15

-

Fall Time

-

2

-

ns

Input Capacitance

-

38

60

Output Capacitance

-

17

-

Reverse Transfer Capacitance

-

12

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on FR4 board, t 10sec.