2/4

ISSUED DATE :2006/03/01

REVISED DATE :

Electrical Characteristics (Tj = 25

unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

50

-

-

V

Gate Threshold Voltage

0.5

-

2.0

V

Forward Transconductance

-

500

-

mS

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

-

-

3.5

Static Drain-Source On-Resistance

-

-

6.0

Ł

Input Capacitance

-

-

50

Output Capacitance

-

-

25

Reverse Transfer Capacitance

-

-

5

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.5

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.