TC1313

DS21974A-page 4

© 2005 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Output Short Circuit Current ................................. Continuous

Power Dissipation (Note 7) ..........................Internally Limited

Storage temperature .....................................-65°C to +150°C

Ambient Temp. with Power Applied.................-40°C to +85°C

Operating Junction Temperature...................-40°C to +125°C

ESD protection on all pins (HBM)

....................................... 3kV

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input/Output Characteristics

Input Voltage

2.7

—

5.5

V

Note 1, Note 2, Note 8

Maximum Output Current

500

——

mA

Note 1

Maximum Output Current

300

——

mA

Note 1

Shutdown Current

—

0.05

1

µA

SHDN1 = SHDN2= GND

—57

100

µA

—

38

—

µA

—

44

—

µA

Shutdown/UVLO/Thermal Shutdown Characteristics

SHDN1,SHDN2,

Logic Input Voltage Low

——

15

SHDN1,SHDN2,

Logic Input Voltage High

45

——

SHDN1,SHDN2,

Input Leakage Current

-1.0

±0.01

1.0

µA

SHDNX =GND

Thermal Shutdown

—

165

—

°C

Note 6, Note 7

Thermal Shutdown Hysteresis

—10

—

°C

Undervoltage Lockout

UVLO

2.4

2.55

2.7

Undervoltage Lockout Hysteresis

UVLO

—

200

—

mV

Note

1:

2:

3:

4:

Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 0.1 mA to the maximum specified output current.

5:

Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

nominal value measured at a 1V differential.

6:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

dissipation causes the device to initiate thermal shutdown.

7:

these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not

able to limit the junction temperature for these cases.

8: