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MCP6544-I/ST Datasheet(PDF) 3 Page - Microchip Technology

Part # MCP6544-I/ST
Description  Push-Pull Output Sub-Microamp Comparators
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP6544-I/ST Datasheet(HTML) 3 Page - Microchip Technology

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© 2006 Microchip Technology Inc.
DS21696E-page 3
MCP6541/1R/1U/2/3/4
AC CHARACTERISTICS
Push-Pull Output
High-Level Output Voltage
VOH
VDD−0.2
V
IOUT = -2 mA, VDD = 5V
Low-Level Output Voltage
VOL
——
VSS+0.2
V
IOUT = 2 mA, VDD = 5V
Short-Circuit Current
ISC
-2.5, +1.5
mA
VDD = 1.6V (Note 4)
ISC
—±30
mA
VDD = 5.5V (Note 4)
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2,
Step = 200 mV, Overdrive = 100 mV, and CL = 36 pF (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Rise Time
tR
—0.85
µs
Fall Time
tF
—0.85
µs
Propagation Delay (High-to-Low)
tPHL
—4
8
µs
Propagation Delay (Low-to-High)
tPLH
—4
8
µs
Propagation Delay Skew
tPDS
—±0.2
µs
(Note 1)
Maximum Toggle Frequency
fMAX
160
kHz
VDD = 1.6V
fMAX
120
kHz
VDD = 5.5V
Input Noise Voltage
Eni
200
µVP-P 10 Hz to 100 kHz
Note 1:
Propagation Delay Skew is defined as: tPDS = tPLH - tPHL.
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C,VIN+ = VDD/2,
VIN– = VSS, and RL =100 kΩ to VDD/2 (Refer to Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the difference
between the input-referred trip points.
2:
VHYST at different temperatures is estimated using VHYST (TA) = VHYST + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.
3:
Input bias current at temperature is not tested for SC-70-5 package.
4:
Limit the output current to Absolute Maximum Rating of 30 mA.
MCP6543 CHIP SELECT (CS) CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN= VSS,
and CL= 36 pF (Refer to Figures 1-1 and 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—0.2 V
DD
V
CS Input Current, Low
ICSL
—5.0
pA
CS = V
SS
CS High Specifications
CS Logic Threshold, High
VIH
0.8 VDD
—VDD
V
CS Input Current, High
ICSH
—1
pA
CS = VDD
CS Input High, VDD Current
IDD
—18
pA
CS = VDD
CS Input High, GND Current
ISS
–20
pA
CS = VDD
Comparator Output Leakage
IO(LEAK)
—1
pA
VOUT = VDD, CS = VDD
CS Dynamic Specifications
CS Low to Comparator Output Low
Turn-on Time
tON
—2
50
ms
CS = 0.2 VDD to VOUT = VDD/2,
VIN– = VDD
CS High to Comparator Output
High Z Turn-off Time
tOFF
—10
µs
CS = 0.8 VDD to VOUT = VDD/2,
VIN– = VDD
CS Hysteresis
VCS_HYST
—0.6
V
VDD = 5V


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