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TC1303B Datasheet(PDF) 6 Page - Microchip Technology |
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TC1303B Datasheet(HTML) 6 Page - Microchip Technology |
6 / 30 page ![]() TC1303B DS21949A-page 6 © 2005 Microchip Technology Inc. Wake-Up Time (From SHDN2 mode), (VOUT2) tWK — 31 100 µs IOUT1 = IOUT2 = 50 mA Settling Time (From SHDN2 mode), (VOUT2) tS — 100 — µs IOUT1 = IOUT2 = 50 mA Power-Good Voltage Range PG VPG 1.0 1.2 —5.5 5.5 VTA = 0°C to +70°C TA = -40°C to +85°C VIN ≤ 2.7 ISINK = 100 µA PG Threshold High (VOUT1 or VOUT2) VTH_H —94 96 % of VOUTX On Rising VOUT1 or VOUT2 VOUTX =VOUT1 or VOUT2 PG Threshold Low (VOUT1 or VOUT2) VTH_L 89 92 — % of VOUTX On Falling VOUT1 or VOUT2 VOUTX =VOUT1 or VOUT2 PG Threshold Hysteresis (VOUT1 and VOUT2) VTH_HYS —2 — % of VOUTX VOUTX =VOUT1 or VOUT2 PG Threshold Tempco ΔVTH/ΔT — 30 — ppm/°C PG Delay tRPD — 165 — µs VOUT1 or VOUT2 =(VTH + 100 mV) to (VTH - 100 mV) PG Active Time-out Period tRPU 140 262 560 ms VOUT1 or VOUT2 =VTH - 100 mV to VTH + 100 mV, ISINK = 1.2 mA PG Output Voltage Low PG_VOL —— 0.2 VVOUT1orVOUT2 =VTH -100 mV, IPG= 1.2 mA VIN2 >2.7V IPG = 100 µA, 1.0V < VIN2 < 2.7V PG Output Voltage High PG_VOH 0.9* VOUT2 —— V VOUT1 or VOUT2 =VTH + 100 mV VOUT2 ≥ 1.8V, IPG = - 500 µA VOUT2 < 1.8V,IPG = - 300 µA DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: VIN1 =VIN2 = SHDN1,2 =3.6V, COUT1 =CIN = 4.7 µF, COUT2 =1µF, L =4.7 µH, VOUT1 (ADJ) = 1.8V, IOUT1 = 100 ma, IOUT2 = 0.1 mA TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C. Parameters Sym Min Typ Max Units Conditions Note 1: The Minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VRX + VDROPOUT, VRX = VR1 or VR2. 2: VRX is the regulator output voltage setting. 3: TCVOUT2 = ((VOUT2max – VOUT2min) * 10 6)/(V OUT2 * DT). 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. 5: Dropout voltage is defined as the input to output voltage differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. 7: The integrated MOSFET switches have an integral diode from the LX pin to VIN, and from LX to PGND. In cases where these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not able to limit the junction temperature for these cases. 8: VIN1 and VIN2 are supplied by the same input source. |
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