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LT1034IS8-1.2 Datasheet(PDF) 3 Page - Linear Technology |
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LT1034IS8-1.2 Datasheet(HTML) 3 Page - Linear Technology |
3 / 8 page 3 LT1034-1.2/LT1034-2.5 1034fe PARAMETER CONDITIONS MIN TYP MAX UNITS Reverse Breakdown Voltage IR = 100µA 6.80 7.0 7.3 V q 6.75 7.0 7.4 V Reverse Breakdown Change 100 µA ≤ IR ≤ 1mA 90 140 mV with Current 100 µA ≤ IR ≤ 1mA q 100 190 mV 1mA ≤ IR ≤ 20mA 160 250 mV 1mA ≤ IR ≤ 20mA q 200 350 mV Temperature Coefficient IR = 100µA q 40 ppm/ °C Long-Term Stability IR = 100µA 20 ppm/ √khrs Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Forward biasing either diode will affect the operation of the other diode. Note 3: This parameter guaranteed by “reverse breakdown change with current” test. Note 4: For the LT1034-1.2: 20 µA ≤ IR ≤ 2mA. For the LT1034-2.5: 30 µA ≤ IR ≤ 2mA. LT1034-1.2 LT1034-2.5 PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Reverse Breakdown Voltage IR = 100µA 1.210 1.225 1.240 2.46 2.5 2.54 V q 1.205 1.225 1.245 2.43 2.5 2.57 V Reverse Breakdown Change (Note 4) 0.5 2.0 1.0 3.0 mV with Current q 1.0 4.0 1.5 6.0 mV 2mA ≤ IR ≤ 20mA 4.0 8.0 6.0 16.0 mV q 6.0 15.0 10.0 20.0 mV Minimum Operating Current q 10 20 15 30 µA Temperature Coefficient IR = 100µA LT1034B q 10 20 10 20 ppm/ °C LT1034 20 40 20 40 ppm/ °C Reverse Dynamic Impedance (Note 3) IR = 100µA 0.25 1.0 0.5 1.5 Ω q 0.50 2.0 1.0 2.5 Ω Low Frequency Noise IR = 100µA, 0.1Hz ≤ F ≤ 10Hz q 46 µVP-P Long-Term Stability IR = 100µA 20 20 ppm/ √khrs ELECTRICAL CHARACTERISTICS The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. 7V Reference. |
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